Character:
●Supports DDR4 functions and operations as defined in the component datasheet
●288-pin Unbuffered Dual Inline Memory Module (UDIMM)
●Data Transfer Rate: Up to 2666 Mbps
●Capacities: 4GB, 8GB, 16GB
●VDD = 1.20V (nominal)
●VPP = 2.5V (nominal)
●VDDSPD = 2.5V (nominal)
●Nominal and dynamic On-Die Termination (ODT) for data, strobe, and masking signals
●Low Power Auto Self Refresh (LPASR)
●Data Bus Inversion (DBI)
●On-die VREFDQ generation and calibration
●On-board I2C Serial Presence Detect (SPD) EEPROM
●16 internal banks; 4 groups, each with 4 banks
●800 MHz fCK for 1600 Mb/sec/pin, 933 MHz fCK for 1866 Mb/sec/pin, 1067 MHz fCK for 2133 Mb/sec/pin, 1200 MHz fCK for 2400 Mb/sec/pin, 1333 MHz fCK for 2666 Mb/sec/pin
●16 banks (4 bank groups)
●Programmable CAS Latency: 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20
●Programmable Additive Latency (CAS Latency): 0, CL - 2, or CL - 1 clock
●Programmable CAS Write Latency (CWL) = 9,11 (DDR4-1600), 10,12 (DDR4-1866), 11,14 (DDR4-2133), 12,16 (DDR4-2400), and 14,18 (DDR4-2666)
●Burst Length: 8, 4; tCCD = 4, no seamless read or write [using A12 or MRS in operation]
●Average refresh period: 7.8 μs at temperatures below TCASE 85°C; 3.9 μs at 85°C < TOPER ≤ 95°C